FPA108 - Light Reflection Emitter / Sensor Array

This page provides the datasheet information for the FPA108, a member of the FPA103 Light Reflection Emitter / Sensor Array family.

Datasheet Summary

Description

The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor.

Fairchild Semiconductor

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Datasheet Details

Part number	FPA108
Manufacturer	Fairchild Semiconductor
File Size	170.23 KB
Description	Light Reflection Emitter / Sensor Array
Datasheet	FPA108 Datasheet
Additional preview pages of the FPA108 datasheet.

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FPA102 - Emitter And Sensor Matched Pair Arrays
FPA103 - Light Reflection Emitter / Sensor Array
FPA104 - Light Reflection Emitter / Sensor Array
FPA105 - Light Reflection Emitter / Sensor Array
FPA106 - Light Reflection Emitter / Sensor Array
FPA107 - Light Reflection Emitter / Sensor Array

Full PDF Text Transcription

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Light Reflection Emitter / Sensor Array Optoelectronic Products 4-8 FPA103,FPA104 FPA105,FPA106 FPA107,FPA108 General Description The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are perpendicular to the face of the device; therefore, the phototransistorresponds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the phototransistor. The diode used in theFPA 103/104/105/106/1071 108 is similar to Fairchild's FPE104 GaAs infraredemitting diode. I.t emits an intense, narrow band of radiation, peaking at approximately 900 nm (nonvisible) when forward biased.

Published: Feb 3, 2019 |