Datasheet4U Logo Datasheet4U.com

FQA13N80 - 800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V.
  • Low gate charge ( typical 68 nC).
  • Low Crss ( typical 30pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability September 2006 QFET ®.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQA13N80-F109 N-Channel MOSFET ON Semiconductor
FQA10N80C-F109 N-Channel QFET MOSFET ON Semiconductor
FQA11N90 N-Channel MOSFET Transistor Inchange Semiconductor
FQA11N90-F109 N-Channel MOSFET ON Semiconductor
FQA11N90C-F109 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQA13N80_F109 MOSFET
FQA13N50 500V N-Channel MOSFET
FQA13N50C 500V N-Channel MOSFET
FQA13N50CF 500V N-Channel MOSFET
FQA10N60C 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQA13N80 800V N-Channel MOSFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability September 2006 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.