Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 18.5 A, 600 V, RDS(on) = 380 mΩ (Max. ) @ VGS = 10 V, ID = 9.3 A.
- Low Gate Charge (Typ. 70 nC).
- Low Crss (Typ. 35 pF).
- 100% Avalanche Tested
D
G DS
TO-3PN
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Rep.
FQA19N60 Datasheet
