FQAF85N06 Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Features - - - - - - - 67A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typical 86 n C) Low Crss ( typical 165 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating ! " G! G D S ! " " " TO-3PF FQAF Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF85N06 60 67 47.4 268 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 810 67 10 7.0 100 0.67 -55 to +175 300 - Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 1.5 40 Units °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test...