FQAF8N80 Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies. Features - 5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V - Low gate charge ( typical 44 n C) - Low Crss ( typical 20 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability G DS TO-3PF FQAF Series G! ! - ◀▲ - - ! Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery...