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FQAF8N80 Datasheet 800V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Overview

FQAF8N80 FQAF8N80 800V N-Channel MOSFET March 2001 QFET TM General.

Key Features

  • 5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 20 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability G DS TO-3PF FQAF Series G! D !.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) D.