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FQAF8N80 - 800V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 20 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability G DS TO-3PF FQAF Series G! D !.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) D.

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Datasheet Details

Part number FQAF8N80
Manufacturer Fairchild Semiconductor
File Size 690.58 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet FQAF8N80 Datasheet
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FQAF8N80 FQAF8N80 800V N-Channel MOSFET March 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • 5.9A, 800V, RDS(on) = 1.
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