FQB4N20L Datasheet 200v Logic N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB4N20L / FQI4N20L December 2000 QFET FQB4N20L / FQI4N20L 200V LOGIC N-Channel.

Datasheet Details

Part number	FQB4N20L
Manufacturer	Fairchild (now onsemi)
File Size	517.30 KB
Description	200V LOGIC N-Channel MOSFET
Datasheet	FQB4N20L_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Key Features

3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Par.

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