FQB4N60 Datasheet | Fairchild Semiconductor

FQB4N60 / FQI4N60 April 2000 QFET FQB4N60 / FQI4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply. Features - - - - - - 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 n C) Low Crss ( typical 8.0 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! " G! ! " " " D2-PAK FQB Series I2-PAK FQI...