Datasheet4U Logo Datasheet4U.com

FQB7N65C - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ®.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQB7N60 N-Channel MOSFET ON Semiconductor
FQB70N08 N-Channel MOSFET INCHANGE
FQB020ADC-007-M EMC Filters TDK-Lambda
FQB020ADC-007-S EMC Filters TDK-Lambda
FQB020ADC-N07-M EMC Filters TDK-Lambda

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQB7N60 600V N-Channel MOSFET
FQB7N10 100V N-Channel MOSFET
FQB7N10L 100V LOGIC N-Channel MOSFET
FQB7N20 200V N-Channel MOSFET
FQB7N20L 200V LOGIC N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FQB7N65C 650V N-Channel MOSFET QFET FQB7N65C 650V N-Channel MOSFET Features • • • • • • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.