FQB7N65C Datasheet | Fairchild Semiconductor

Features - - - - - - 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 n C) Low Crss ( typical 12 p F) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D2-PAK FQB Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter 650 7 4.45 28 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 212 7 17.3 4.5 173 1.38 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 0.75 62.5 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation .fairchildsemi. FQB7N65C Rev. A FQB7N65C 650V N-Channel...