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FQP10N50CF - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V.
  • Low gate charge (typical 43 nC).
  • Low Crss (typical 16pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode TM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.