FQP10N50CF Datasheet | Fairchild Semiconductor

FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features - 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V - Low gate charge (typical 43 nC) - Low Crss (typical 16pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Fast recovery body diode Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are...