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FQPF6N90 - 900V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 3.4A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

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FQPF6N90C 900V N-Channel MOSFET
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Full PDF Text Transcription

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FQPF6N90 FQPF6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features • • • • • • 3.4A, 900V, RDS(on) = 1.
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