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FQPF6N90 Datasheet 900v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQPF6N90 FQPF6N90 900V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 3.4A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQPF6N90C 900V N-Channel MOSFET
FQPF6N15 150V N-Channel MOSFET
FQPF6N25 250V N-Channel MOSFET
FQPF6N40C 400V N-Channel MOSFET
FQPF6N40CF N-Channel MOSFET
FQPF6N50 500V N-Channel MOSFET
FQPF6N60 600V N-Channel MOSFET
FQPF6N60C 600V N-Channel MOSFET
FQPF6N70 700V N-Channel MOSFET
FQPF6N80 800V N-Channel MOSFET

FQPF6N90 Distributor