FQPF6N90C Datasheet | Fairchild Semiconductor

FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies. Features - - - - - - 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 n C) Low Crss ( typical 11 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - G! G DS TO-220 FQP Series GD S TO-220F FQPF...