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FQPF6N90C - 900V N-Channel MOSFET

Download the FQPF6N90C datasheet PDF. This datasheet also covers the FQP6N90C variant, as both devices belong to the same 900v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Co.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP6N90C-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FQPF6N90 900V N-Channel MOSFET
FQPF6N15 150V N-Channel MOSFET
FQPF6N25 250V N-Channel MOSFET
FQPF6N40C 400V N-Channel MOSFET
FQPF6N40CF N-Channel MOSFET

Full PDF Text Transcription

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FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. TM Features • • • • • • 6A, 900V, RDS(on) = 2.
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