FQT3P20 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters.
FQT3P20 Key Features
- 0.67A, -200V, RDS(on) = 2.7Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching Imp
- SOT-223