FQT5N20 Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. Features - - - - - 1.0A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 6.0 n C) Low Crss ( typical 6.0 p F) Fast switching Improved dv/dt capability ! " G! ! " " " SOT-223 FQT Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQT5N20 200 1.0 0.8 4.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 60 1.0 0.25 5.5 2.5 0.02 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient - Typ -Max 50 Units °C/W - When mounted on the minimum pad size remended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 Electrical Characteristics...