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FQU4N50 - 500V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • 2.6 A, 500 V, RDS(on)=2.7 Ω(Max. )@VGS=10 V, ID=1.3 A.
  • Low Gate Charge (Typ. 10 nC).
  • Low Crss (Typ. 6.0 pF).
  • 100% Avalanche Tested                    .
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Datasheet Details

Part number FQU4N50
Manufacturer Fairchild Semiconductor
File Size 871.27 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet FQU4N50 Datasheet
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Full PDF Text Transcription

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FQD4N50 / FQU4N50 N-Channel MOSFET FQD4N50 / FQU4N50 N-Channel QFET® MOSFET 500 V, 2.6 A, 2.7 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. March 2013 Features • 2.6 A, 500 V, RDS(on)=2.7 Ω(Max.)@VGS=10 V, ID=1.3 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 6.
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