Datasheet4U Logo Datasheet4U.com

FQU4N50TU_WS - N-Channel QFET MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max. ) @ VGS = 10 V, ID = 1.3 A.
  • Low Gate Charge (Typ. 10 nC).
  • Low Crss (Typ. 6.0 pF).
  • 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. .
  •  4 4.
  •  ; 4 ; !5 8         .
  •              1,%(62   1,/))62 8  9  .
  •      8 '! ; .

📥 Download Datasheet

Datasheet preview – FQU4N50TU_WS

Datasheet Details

Part number FQU4N50TU_WS
Manufacturer Fairchild Semiconductor
File Size 908.05 KB
Description N-Channel QFET MOSFET
Datasheet download datasheet FQU4N50TU_WS Datasheet
Additional preview pages of the FQU4N50TU_WS datasheet.

📁 Similar Datasheet

  • FQU4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQU4N60C - 4A 600V N-Channel MOSFET (HAOHAI)
  • FQU4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQU10N20 - N-Channel MOSFET (INCHANGE)
  • FQU11P06 - P-Channel MOSFET (VBsemi)
  • FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQU1N60C - N-Channel MOSFET (HAOHAI)
  • FQU1N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU2N50B - N-Channel MOSFET (ON Semiconductor)
  • FQU2N60C - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQU4N50TU_WS — N-Channel QFET® MOSFET FQU4N50TU_WS N-Channel QFET® MOSFET 500 V, 2.6 A, 2.7 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V, ID = 1.3 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 6.0 pF) • 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Published: |