Download H21A Datasheet PDF
Fairchild Semiconductor
H21A
DESCRIPTION The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light Ø 0.133 (3.4) Ø 0.126 (3.2) (2X) C L 0.39 (1.00) 0.34 (0.85) 0.755 (19.2) 0.745 (18.9) .073 (1.85) .133 (3.38) 0.129 (3.3) 0.119 (3.0) Optical C L rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state. 0.433 (11.0) 0.422 (10.7) SCHEMATIC 1 4 0.125 (3.2) 0.119 (3.0) C L .295 (7.5) .272 (6.9) 0.315 (8.0) FEATURES 0.110 (2.8) 0.091 (2.3) - Opaque housing - Low cost - .035” apertures - High IC(ON) 1. Derate power dissipation linearly 1.33 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron tip 1/16” (1.6mm) minimum from...