Datasheet4U.com

HGT4E30N60B3DS - 60A 600V UFS Series N-Channel IGBT

Product Overview

Fairchild Semiconductor

📥 Download Datasheet

HGT4E30N60B3DS 60A 600V UFS Series N-Channel IGBT by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – HGT4E30N60B3DS

Datasheet Details

Part number	HGT4E30N60B3DS
Manufacturer	Fairchild Semiconductor
File Size	214.44 KB
Description	60A 600V UFS Series N-Channel IGBT
Datasheet	HGT4E30N60B3DS Datasheet
Additional preview pages of the HGT4E30N60B3DS datasheet.

Product details

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

📁 Similar Datasheet

HGT011NE6A - 65V N-Ch Power MOSFET (Hunteck)
HGT1S10N120BNS - N-Channel IGBT (Intersil Corporation)
HGT1S11N120CNS - N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS - N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS - N-Channel IGBT (ON Semiconductor)
HGT1S12N60A4S - N-Channel IGBT (Intersil Corporation)
HGT1S12N60B3DS - N-Channel IGBT (Intersil Corporation)
HGT1S12N60B3S - N-Channel IGBT (Intersil Corporation)

Other Datasheets by Fairchild Semiconductor

HGT4E20N60A4DS - 600V SMPS Series N-Channel IGBT
HGT1N30N60A4D - 600V/ SMPS Series N-Channel IGBT
HGT1N40N60A4D - N-Channel IGBT
HGT1S10N120BNS - 35A/ 1200V/ NPT Series N-Channel IGBT
HGT1S11N120CNS - N-Channel IGBT
HGT1S12N60A4DS - N-Channel IGBT

Published: Mar 23, 2005 |