HGTG12N60B3D Datasheet N-channel IGBT

Manufacturer: Fairchild (now onsemi)

Overview: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the.

Datasheet Details

Part number	HGTG12N60B3D
Manufacturer	Fairchild (now onsemi)
File Size	205.73 KB
Description	N-Channel IGBT
Datasheet	HGTG12N60B3D_FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching.

HGTG12N60B3D Distributor

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