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IRF624A - Advanced Power MOSFET

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current : 10 µA (Max. ) @ VDS = 250V.
  • Low RDS(ON) : 0.742 Ω (Typ. ) IRF624A BVDSS = 250 V RDS(on) = 1.1 Ω ID = 4.1 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR www. DataSheet4U. com Characteristic Drain-to-Source Voltage Continuo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ♦ Low RDS(ON) : 0.742 Ω (Typ.) IRF624A BVDSS = 250 V RDS(on) = 1.1 Ω ID = 4.1 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR www.DataSheet4U.