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IRF624 - N-Channel Mosfet Transistor

Key Features

  • RDS(on) =1.1Ω.
  • 3.8A and 250V.
  • single pulse avalanche energy rated.
  • SOA is Power- Dissipation Limited.
  • Linear Transfer Characteristics.
  • High Input Impedance isc Product Specification IRF624.

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Full PDF Text Transcription (Reference)

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =1.1Ω ·3.8A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance isc Product Specification IRF624 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±20 V V ID Drain Current-Continuous 3.8 A IDM Drain Current-Single Plused 15 A PD Total Dissipation @TC=25℃ 40 W Tj Max.