| Part Number | IRF624 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o.
* * * * * * 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv. |
IRF624 Datasheet and Specifications PDF
The IRF624 is a 250V N-Channel MOSFET.
| Part Number | IRF624 Datasheet |
|---|---|
| Description | N-Channel Mosfet Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =1.1Ω ·3.8A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics .
*RDS(on) =1.1Ω *3.8A and 250V *single pulse avalanche energy rated *SOA is Power- Dissipation Limited *Linear Transfer Characteristics *High Input Impedance isc Product Specification IRF624 *DESCRITION *Designed for high speed applications, such as switching power supplies , AC and DC motor contro. |
| Part Number | IRF624 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is.
* Dynamic dV/dt rating * Repetitive avalanche rated Available * Fast switching Available * Ease of paralleling * Simple drive requirements Available * Material categorization: for definitions of compliance please see Note * This datasheet provides information about p. |