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IRFI624B - N-Channel MOSFET

This page provides the datasheet information for the IRFI624B, a member of the IRFW624B N-Channel MOSFET family.

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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  • G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Contin.

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Datasheet preview – IRFI624B

Datasheet Details

Part number IRFI624B
Manufacturer Fairchild Semiconductor
File Size 689.19 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFI624B Datasheet
Additional preview pages of the IRFI624B datasheet.

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Full PDF Text Transcription

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IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • • • • • • 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.
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