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IRFI624B - N-Channel MOSFET

Download the IRFI624B datasheet PDF. This datasheet also covers the IRFW624B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Key Features

  • 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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  • G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Contin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFW624B_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFI624G Power MOSFET International Rectifier
IRFI624G Power MOSFET Vishay
IRFI624GPBF Power MOSFET International Rectifier
IRFI620G Power MOSFET International Rectifier
IRFI620G Power MOSFET Vishay

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFI624B 250V N-Channel MOSFET
IRFI624A Power MOSFET
IRFI620A Power MOSFET
IRFI620B 200V N-Channel MOSFET
IRFI620B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • • • • • • 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.