Datasheet Summary
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.)
IRFR/U230A
BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A
D-PAK
2 1 3 1
I-PAK
1. Gate 2. Drain 3....
