IRLI510A - ADVANCED POWER MOSFET

Fairchild (now onsemi)

Key Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
Lower RDS(ON): 0.336Ω (Typ. ) IRLW/I510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Char.

IRLI510A advanced power mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRLI510A
Manufacturer	Fairchild (now onsemi)
File Size	268.75 KB
Description	ADVANCED POWER MOSFET
Datasheet	IRLI510A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRLW/I510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3.