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IRLI540A - Power MOSFET

Download the IRLI540A datasheet PDF. This datasheet also covers the IRLW540A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175°C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
  • Lower RDS(ON): 0.046Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLW540A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLI540G HEXFET Power MOSFET International Rectifier
IRLI540G Power MOSFET Vishay
IRLI540N HEXFET Power MOSFET International Rectifier
IRLI540NPBF HEXFET Power MOSFET International Rectifier
IRLI540NPbF Power MOSFET Infineon

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRLI510A ADVANCED POWER MOSFET
IRLI530A HEXFET Power MOSFET
IRLI610A Advanced Power MOSFET
IRLI620A Power MOSFET
IRLI630A ADVANCED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 IRLW/I540A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.