IRLI540N Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 9.1497A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.

Datasheet Details

Part number	IRLI540N
Manufacturer	International Rectifier (now Infineon)
File Size	154.36 KB
Description	HEXFET Power MOSFET
Datasheet	IRLI540N_InternationalRectifier.pdf

General Description

l l IRLI540N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.044Ω G ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

Key Features

N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E 7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5) M IN. 1 2 3 NO T E S : 1 D IME N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N TR O L L ING D IM E N S IO N: IN C H . 3.3 0 (.13 0 ) 3.1 0 (.12 2 ) -B 1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D A 1 .4 0 (.0 5 5) 3X 1 .0 5 (.0 4 2) 2 .54 (.1 0 0) 2X 0 .9 0 (.0 3 5 ) 3X 0 .7 0 (.0 2 8 ) 0 .2 5 (.0 1 0) M A M B 3X 0 .4 8 (.0 1.

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