Datasheet4U Logo Datasheet4U.com

IRLI540G - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Key Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • Logic-level gate drive.
  • RDS (on) specified at VGS = 4 V and 5 V.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLI540G HEXFET Power MOSFET International Rectifier
IRLI540A Power MOSFET Fairchild Semiconductor
IRLI540N HEXFET Power MOSFET International Rectifier
IRLI540NPBF HEXFET Power MOSFET International Rectifier
IRLI540NPbF Power MOSFET Infineon

Other Datasheets by Vishay

Part Number Description
IRLI520G Power MOSFET
IRLI530G Power MOSFET
IRLI630G Power MOSFET
IRLI640G ower MOSFET
IRLIZ14G Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com IRLI540G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 64 9.4 27 Single 0.077 FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Logic-level gate drive • RDS (on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.