IRLI540NPBF Overview
l PD -95454 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.044Ω G S ID = 23A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable...
IRLI540NPBF Key Features
- Advanced Process Technology
- Isolated Package
- High Voltage Isolation = 2.5KVRMS
- Sink to Lead Creepage Dist. = 4.8mm
- Fully Avalanche Rated
