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IRLI610A - Advanced Power MOSFET

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Fairchild Semiconductor

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IRLI610A Advanced Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRLI610A

Datasheet Details

Part number	IRLI610A
Manufacturer	Fairchild Semiconductor
File Size	263.36 KB
Description	Advanced Power MOSFET
Datasheet	IRLI610A Datasheet
Additional preview pages of the IRLI610A datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 1.185Ω (Typ. ) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Chara.

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Published: Jan 24, 2007 |