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ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.0019Ω (Typ), VGS = 10V • rDS(ON) = 0.0027Ω (Typ), VGS = 4.
ISL9N302AP3 Datasheet
