ISL9N303AS3ST Datasheet | Fairchild Semiconductor

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 3.2mΩ General Description This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - rDS(ON) = 0.0026Ω (Typ), VGS = 10V - rDS(ON) = 0.004Ω (Typ), VGS = 4.5V - Qg (Typ) = 61nC, VGS = 5V - Qgd (Typ) = 17nC - CISS (Typ) = 7000pF Applications - DC/DC converters DRAIN...