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ISL9N304AP3/ISL9N304AS3ST
February 2002
PWM Optimized
ISL9N304AP3/ISL9N304AS3ST
N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 4.5mΩ
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.0036Ω (Typ), VGS = 10V • rDS(ON) = 0.0060Ω (Typ), VGS = 4.
ISL9N304AS3ST Datasheet
