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KSB1366
KSB1366
LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO IC IB PC PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT
Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product
IC = - 50mA, IB = 0 VCB = - 60V, IE
KSB1366 Datasheet
