KSB1366 Datasheet
KSB1366 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complemen.
OL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -60V ; IE= 0 IEBO Emitter Cutoff Current VEB= -7.
KSB1366 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC .
-220F 1.Base 2.Collector 3.Emitter Value - 60 - 60 -7 -3 - 0.5 2 25 150 - 55 ~ 150 Units V V V A A W W °C °C Min. - 60 100 20 Typ. Max. - 100 - 100 320 Units V µA µA - 0.5 - 0.7 9 -1 V -1 V MHz G 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Cha.