Inchange Semiconductor KSB1366
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | KSB1366 |
|---|---|
| Datasheet | KSB1366 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)●Collector Power Dissipation- : PC= 25 W@ TC= 25℃
●Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)
●Complement to Type KSD2012
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ KSB1366 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VC...
