Fairchild Semiconductor KSC5026M
NPN Silicon Transistor
| Part No. | KSC5026M |
|---|---|
| Datasheet | KSC5026M Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High Voltage and High Reliability● High Speed Switching
● Wide SOA 1 TO-126 1. Emitter 2.Collector 3.Base
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 1.5 5 0.8 20 150 - 55 to 150 Units V V V A A A W °C °C Package Marking and Ordering Information Part Number Marking Package Packing Method Remarks KSC5026MOS* C5026M-O TO-126 BULK * The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes hFE-class © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 1 KSC5026M — NPN Silicon TransistorELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO VCEX(sus) Collector-Base Breakdown Voltage IC = 1mA, IE = 0 Colle...
