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KSC5026M - NPN Silicon Transistor

Key Features

  • High Voltage and High Reliability.
  • High Speed Switching.
  • Wide SOA 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 1.5 5 0.8 20 150 - 55 to.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KSC5026M — NPN Silicon Transistor KSC5026M NPN Silicon Transistor January 2011 Features • High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 1.5 5 0.