onsemi KSC5026M
NPN Silicon Transistor
| Part No. | KSC5026M |
|---|---|
| Datasheet | KSC5026M Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High Voltage and High Reliability● High Speed Switching
● Wide SOA
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Junction Temperature Value Unit 1100 V 800 V 7 V 1.5 A 5 A 0.8 A 20 W 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET 1. Emitter 2. Collector 3. Base TO−126−3LD CASE 340AS MARKING DIAGRAM &3 C5026M−O &3 = Date Code (Year & Week) C5026M = Specific Device Code O = hFE Grade ORDERING INFORMATION Device KSC5026MOS Package TO−126−3 (Pb−Free) Shipping 2000 Units / Bulk Bag © Semiconductor Components Industries, LLC, 2011 1 September, 2023 − Rev.
