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KSC5026M - NPN Transistor

General Description

Low Collector Saturation Voltage High breakdown voltage Small reverse transfer capacitance and excellent high frequency characteristic 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high definit

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high definition CRT display ,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSC5026M isc website：www.iscsemi.