Datasheet Details
| Part number | KSC5026M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.04 KB |
| Description | NPN Transistor |
| Datasheet | KSC5026M-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSC5026M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.04 KB |
| Description | NPN Transistor |
| Datasheet | KSC5026M-INCHANGE.pdf |
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·Low Collector Saturation Voltage ·High breakdown voltage ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high definition CRT display ,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSC5026M isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ;
IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;
IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSC5026M | NPN Silicon Transistor | Fairchild Semiconductor |
 |
KSC5026 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
KSC5026 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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