KSC5801 Datasheet | Fairchild Semiconductor

High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) - - - - High Breakdown Voltage : BVCBO=1500V High Speed Switching : t F=0.1µs (Typ.) Wide S.O.A For C-Monitor (48KHz) & C-TV (~21”) B Equivalent Circuit C 50Ω typ. E TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 8 16 50 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) VF t F Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Fall Time Test Condition VCE = 1400V, VBE = 0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1.0A VCE = 5V, IC = 5.0A IC = 5A, IB = 1.2A IC = 5A, IB = 1.2A IF = 6A VCC = 200V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 50Ω 40 10 4 Min. Typ. Max. 1 10 250 30 7 5 1.5 2 0.2 V V V µs Units V m A m A hermal Characteristics TC=25°C unless otherwise noted Symbol Rθj C Item Thermal Resistance, Junction to Case Max 2.5 Unit °C/W ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics 10 9 VCE = 5V IC[A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0 1 0.1 IB = 2.0A 1.8A 1.6A 1.4A 1.2A 1.0A 0.8A 0.6A 0.4A IB = 0.2A h FE, DC CURRENT GAIN 125 C 75 C 25 C -25 C 125 C -25 C VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat)[V], BASE-EMITTER VOLTAGE VBE(sat)[m V], SATURATION VOLTAGE IC =...