KSC5802D Datasheet | Fairchild Semiconductor

High Voltage Color Display Horizontal Deflection Output (Built In Damper Diode) - - .. - - High Breakdown Voltage BVCBO=1500V High Speed Switching : t F=0.1µs (Typ.) Wide S.O.A For C-Monitor(69KHz) B Equivalent Circuit C 50Ω typ. E TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 10 30 60 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) t F Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Test Condition VCE = 1400V, VBE=0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 50 15 7 Min. Typ. Max. 1 10 250 40 11.5 3 1.5 0.3 V V µs Units m A µA m A ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics 10 9 V CE=5V IC[A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0 2 4 6 IB = 400m A IB = 300m A IB = 200m A IB = 100m A h FE, DC CURRENT GAIN IB = 1.0A IB = 900m A IB = 800m A IB = 700m A IB = 600m A IB = 500m A .. 1 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characterisic Figure 2. DC current Gain VCE(sat)[m V], SATURATION VOLTAGE VCE =...