KSC5802 Datasheet | Fairchild Semiconductor

High Voltage Color Display Horizontal Deflection Output (No Damper Diode) - - - - High Breakdown Voltage : BVCBO=1500V High Speed Switching : t F=0.1µs (Typ.) Wide S.O.A For C-Monitor(69KHz) TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Parameter Value 1500 800 6 10 30 60 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) t F Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Test Condition VCE = 1400V, VBE=0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.1 15 7 Min. Typ. Max. 1 10 1 48 10 3 1.5 0.3 V V µs Units m A u A m A ©2000 Fairchild Semiconductor International Rev. B. February 2000 Typical Characteristics STATIC CHARACTERISTIC 10 9 8 7 IB=2A IB=1.8A 10 BASE EMITTER ON VOLTAGE Vce=5V 8 Ic[A], COLLECTOR CURRENT IB=1.2A IB=1.0A IB=0.8A IB=0.6A IB=0.4A IB=0.2A 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 Ic [A], COLLECTOR CURRENT IB=1.6A IB=1.4A 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE[V], COLLECTOR EMITTER VOLTAGE Vbe [V], BASE EMITTER VOLTAGE DC CURRENT GAIN 100 Vce=5V 10 COLLECTOR-EMITTER SATURATION VOLTAGE 1 25 Vce(sat) [m V], SATURATION VOLTAGE 125...