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KST3906
KST3906
General Purpose Transistor
3
2 1
SOT-23
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature
1. Base 2. Emitter 3. Collector
Value -40 -40 -5 -200 350 150
Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC= -10µA, IE=0 IC= -1.0mA, IB=0 IE=10µA, IC=0 VCE= -30V, VEB= -3V VCE= -1V, IC= -0.
KST3906 Datasheet
