KST4123 Datasheet | Fairchild Semiconductor

General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient Value 40 30 5 200 350 150 357 Units V V V m A m W °C °C/W Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (sat) f T Cib Cob NF Parameter Collector-Base Breakdown Voltage - Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current - DC Current Gain - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Current Gain Bandwidth Product Input Capacitance Output Capacitance Noise Figure Test Condition IC=10µA, IE=0 IC=1m A, IE=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=2m A VCE=1V, IC=50m A IC=50m A, IB=5m A IC=50m A, IB=5m A VCE=20V, IC=10m A, f=100MHz VBE=0.5V, IC=0, f=100KHz VCB=5V, IE=0, f=100KHz VCE=5V, IC=100µA, RS=1KΩ Noise Bandwidth=10Hz to 15.7KHz 250 8 4 6 50 25 Min. 40 30 5 50 50 150 0.3 0.95 V V MHz p F p F d B Max. Units V V V n A n A - Pulse Test: PW≤300µs, Duty Cycle≤2% Marking 5B ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 - 0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ Active Array™ FACT Quiet series™ Bottomless™ FAST® FASTr™ Cool FET™...