KST42 Datasheet | Fairchild Semiconductor

KST42/43 KST42/43 High Voltage Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KST42 : KST43 VCEO Collector-Emitter Voltage : KST42 : KST43 VEBO IC PC TSTG RTH(j-a) Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient 300 200 6 500 350 150 357 V V V m A m W °C °C/W 300 200 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Emitter Breakdown Voltage : KST42 : KST43 - Collector -Emitter Breakdown Voltage : KST42 : KST43 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current - DC Current Gain Test Condition IC=100µA, IE=0 Min. 300 200 IC=1m A, IB=0 300 200 IE=100µA, IC=0 VCB=200V, IE=0 VCB=5V, IC=0 VCE=10V, IC=1m A VCE=10V, IC=10m A VCE=10V, IC=30m A IC=20m A, IB=2m A IC=20m A, IB=2m A VCB=20V, IE=0 f=1MHz VCE=20V, IC=10m A f=100MHz 50 25 40 40 0.5 0.9 3 4 V V p F p F MHz 6 0.1 0.1 V V V µA µA Max. Units V V BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (sat) Cob - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Output Capacitance : KST42 : KST43 f T Current Gain Bandwidth Product - Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 Marking Code Type Mark KST42 1D Marking KST43 1E 1D ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB h FE, DC CURRENT GAIN VCE =...