KST4124 Datasheet | Fairchild Semiconductor

General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 30 25 5 200 350 150 Units V V V m A m W °C - Refer to KST3904 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (sat) f T Cob NF Parameter Collector-Base Breakdown Voltage - Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current - DC Current Gain - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC=10µA, IE=0 IC=1.0m A, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=2m A VCE=1V, IC=50m A IC=50m A, IB=5.0m A IC=50m A, IB=5.0m A IC=10m A, VCE=20V f=100MHz VCB=5V, IE=0, f=1.0MHz IC=100µA, VCE=5V RS=1KΩ f=10Hz to 15.7KHz 300 4 5 120 60 Min. 30 25 5 50 50 360 0.3 0.95 V V MHz p F d B Max. Units V V V n A n A - Pulse Test: PW≤300µs, Duty Cycle≤2% Marking ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 - 0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ Active Array™ FACT Quiet series™ Bottomless™ FAST® FASTr™ Cool FET™ CROSSVOLT™ FRFET™ Global Optoisolator™ DOME™ Eco SPARK™ GTO™ E2CMOS™ Hi Se C™ En Signa™ I2C™...