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MJD112 NPN Silicon Darlington Transistor
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix)
November 2006
tm
Equivalent Circuit C
B
1 D-PAK
1.Base 2.Collector 3.Emitter
R1 R2
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
R1 ≅ 10kΩ R2 ≅ 0.