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MJD112 - NPN Silicon Darlington Transistor

Key Features

  • High DC Current Gain.
  • Built-in a Damper Diode at E-C.
  • Lead Formed for Surface Mount.

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MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter R1 ≅ 10kΩ R2 ≅ 0.