Fairchild Semiconductor MJD117
PNP Silicon Darlington Transistor
| Part No. | MJD117 |
|---|---|
| Datasheet | MJD117 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP Silicon Darlington Transistor |
| Buy | Stock & Price |
APPLICATIONS
● High DC Current Gain● Built-in a Damper Diode at E-C
● Lead Formed for Surface Mount
APPLICATIONS
(No Suffix)● Straight Lead (I-PAK, “ - I “ Suffix)
● Electrically Similar to Popular TIP117 1 D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature - 100 - 100 -5 -2 -4 - 50 20 1.75 150 - 65 ~ 150 V V V A A mA W W °C °C Equivalent Circuit C B R1 R1 ≅ 10kΩ R2 ≅ 0.6kΩ R2 EELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO (sus) ICEO ICBO IEBO hFE *Collector-Emitter Susta
