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MJD117L - EPITAXIAL PLANAR PNP TRANSISTOR

Download the MJD117L datasheet PDF. This datasheet also covers the MJD117 variant, as both devices belong to the same epitaxial planar pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain. : hFE=1000(Min. ), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJD117-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJD117L
Manufacturer KEC
File Size 392.56 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet MJD117L Datasheet

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Other Datasheets by KEC

Part Number Description
MJD117 EPITAXIAL PLANAR PNP TRANSISTOR
MJD112 EPITAXIAL PLANAR NPN TRANSISTOR
MJD112L EPITAXIAL PLANAR NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -2 -4 -50 1.0 20 150 -55 150 UNIT V V V A mA W C B Q A C H FF 123 1. BASE 2. COLLECTOR 3.