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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD117 TRANSISTOR (PNP)
TO-251-3L
FEATURES
z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -100 -100
-5 -2 1.75 71 150 -55~+150
1. BASE
2. COLLECTOR
3.
MJD117 Datasheet
