JCET MJD117
PNP Transistor
FEATURES
z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -100 -100 -5 -2 1.75 71 150 -55~+150 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A W ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter volta