| Part Number | MJD117 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for r. erwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA VBE(sat)* Base-Emitter Saturation Voltage IC=- 4A; IB=- 40mA VBE(on)* Base-Emitter On Voltage IC=-2A; VCE=-3V . |
MJD117 Datasheet and Specifications PDF
The MJD117 is a Silicon PNP Power Transistor.
| Part Number | MJD117 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-251-3L FEATURES z High DC Current Gain z Low Collector-Emitter Saturation Vo. z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Di. |
| Part Number | MJD117 Datasheet |
|---|---|
| Description | PNP Silicon Darlington Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | MJD117 MJD117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Su. . |
| Part Number | MJD117 Datasheet |
|---|---|
| Description | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
| Manufacturer | Continental Device India |
| Overview | Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Total Power Dissipation Tc=25ºC Derate Above 25ºC Total Power Dissipation Ta=25ºC D. . |